houssaine machhadani, Researcher at CEA-Grenoble

houssaine machhadani

Researcher at CEA-Grenoble

The French Atomic Energy Commission

Location
France
Education
Doctorate, nanotechnology semiconductor physics optics photonics intersubband lasers detectors optoelectronics
Experience
11 years, 8 Months

Share My Profile

Block User


Work Experience

Total years of experience :11 years, 8 Months

Researcher at CEA-Grenoble at The French Atomic Energy Commission
  • France
  • September 2017 to August 2019

Fabrication and integration of superconductor single photon detector (SSPD) on Si/SiO2
waveguides. Superconductor material made of NbTiN film is sputtered on the wafer,
followed by a patterning process into a meander structure by electron-beam lithography
and inductively-coupled plasma etching.

researcher in nanotechnologies at Linköping University
  • Sweden
  • February 2013 to August 2017

Development of single photon emitter based on InGaN single quantum dot (QD) embedded
in a micro-size GaN pyramids for quantum cryptography and quantum information
processing applications. Optical spectroscopy were used intensively in this project to
identify the best QDs candidates for time correlation spectroscopy (HBT setup). In the
same time, a huge effort were employed in the fabrication side to connect the QDs
electrically.

Postdoctoral researcher at University of Puerto Rico | USA
  • Puerto Rico
  • July 2011 to December 2012

Design and growth by MOCVD of Nitride based semiconductors solar cells. The advantage
of using InGaN based solar cells instead of conventional Si based one, is their
superior resistance to the cosmic particles bombardment. The project was financed by
MEP/NASA (The Mars Exploration Program).

research and development at University Paris-Sud XI
  • France
  • September 2007 to March 2011

Exploration of the intersubband properties of wide band gap semiconductors, namely GaN and AlGaN, in a broad spectral range from near-visible to THz frequencies. The goal was to engineer the quantum confinement of electrons in ultra thin quantum well layers in order to achieve intersubband optical resonances between the electron confined states and to develop a new class of optoelectronic devices such as quantum cascade detectors or lasers, in a broad spectral range from near-visible to far-infrared.

Education

Doctorate, nanotechnology semiconductor physics optics photonics intersubband lasers detectors optoelectronics
  • at University Paris-Sud XI
  • March 2011

Exploration of the intersubband properties of wide band gap semiconductors, namely GaN and AlGaN, in a broad spectral range from near-visible to THz frequencies. The goal was to engineer the quantum confinement of electrons in ultra thin quantum well layers in order to achieve intersubband optical resonances between the electron confined states and to develop a new class of optoelectronic devices such as quantum cascade detectors or lasers, in a broad spectral range from near-visible to far-infrared.

Master's degree, Materials Science and Devices Physics
  • at Denis Diderot University
  • July 2007

Specialties & Skills

Quantum Optics
Device Physics
IR spectroscopy
Lithography
Photonics
Infrared spectroscopy : FTIR
Photo-induced absorption
Micro-photoluminescence spectroscopy (µ-PL)
Intersubband transitions on quantum wells
Intersubband transitions on quantum wells
Low temperature experiments (liquid nitrogen and helium)
Optical emission spectroscopy
Nitride-based detector and modulator : Electrical and optical characterization
Intersubband transitions on quantum wells
Clean room

Languages

French
Expert
English
Expert
Arabic
Native Speaker